nesg2101m16 nec's npn sige high frequency transistor description nec's nesg2101m16 is fabricated using nec?s high voltage silicon germanium process (uhs2-hv), and is designed for a wide range of applications including low noise ampli?ers, medium power ampli?ers, and oscillators california eastern laboratories ? high breakdown voltage sige technology v ceo = 5 v (absolute maximum) ? high output power: p 1db = 21 dbm at 2 ghz ? low noise figure: nf = 0.9 db at 2 ghz nf = 0.6 db at 1 ghz ? high maximum stable power gain: msg = 17 db at 2 ghz ? low profile m16 package: 6-pin lead-less minimold features part number nesg2101m16 package outline m16 symbols parameters and conditions units min typ max p 1db output power at 1 db compression point dbm 21 v ce = 3.6 v, i cq = 10 ma, f = 2 ghz, z s = z sopt , zl = z lopt g l linear gain, v ce = 3.6 v, i cq = 10 ma, f = 2 ghz, db 15 nf noise figure at v ce = 2 v, i c = 10 ma, f = 2 ghz, db 0.9 1.2 z s = z sopt , zl = z lopt g a associated gain at v ce = 2 v, i c = 10 ma, f = 2 ghz, db 11.0 13.0 z s = z sopt , zl = z lopt nf noise figure at v ce = 2 v, i c = 7ma, f = 1 ghz, db 0.6 z s = z sopt , zl = z lopt g a associated gain at v ce = 2 v, i c = 7 ma, f = 1 ghz, db 19.0 z s = z sopt , zl = z lopt msg maximum stable gain 1 at v ce = 3 v, i c = 50 ma, f = 2 ghz db 14.5 17.0 |s 21e | 2 insertion power gain at v ce = 3 v, i c = 50 ma, f = 2 ghz db 11.5 13.5 f t gain bandwidth product at v ce = 3 v, i c = 50 ma, f = 2 ghz ghz 14 17 c re reverse transfer capacitance 2 at v cb = 2 v, i e = 0 ma, f = 1 mhz pf 0.4 0.5 i cbo collector cutoff current at v cb = 5v, i e = 0 na 100 i ebo emitter cutoff current at v eb = 1 v, i c = 0 na 100 h fe dc current gain 3 at v ce = 2 v, i c = 15 ma 130 190 260 electrical characteristics (t a = 25c) rf dc s 21 s 12 notes: 1. msg = 2. collector to base capacitance when the emitter pin is grounded. 3. pulsed measurement, pulse width 350 s, duty cycle 2 %. preliminary data sheet m16
note: 1. operation in excess of any one of these parameters may result in permanent damage. 2. mounted on 1.08 cm 2 x 1.0 mm (t) glass epoxy pcb. absolute maximum ratings 1 (t a = 25c) nesg2101m16 outline dimensions (units in mm) package outline m16 6-pin lead-less minimold pin connections 1. collector 2. emitter 3. emitter symbols parameters units ratings v cbo collector to base voltage v 13.0 v ceo collector to emitter voltage v 5.0 v ebo emitter to base voltage v 1.5 i c collector current ma 100 p t 2 total power dissipation mw 190 t j junction temperature c 150 t stg storage temperature c -65 to +150 ordering information part number quantity supplying form NESG2101M16-T3-A 10 k pcs reel pin 1 (collector), pin 6 (emitter) face the perfora - tion side of the tape 0.50.05 0.125 +0.1 -0.0 5 0.4 0.4 0.8 0.150.05 1.2 +0.07 -0.0 5 0.8 +0.07 -0.0 5 1.00.05 1 2 3 6 5 4 hz 4. base 5. emitter 6. emitter life support applications these nec products are not intended for use in life support devices, appliances, or systems where the malfunction of these prod ucts can reasonably be expected to result in personal injury. the customers of cel using or selling these products for use in such applications do so at their own risk and agree to fully indemnify cel for all damages resulting from such improper use or sale. a business partner of nec co m p ound semiconductor devices, ltd . 11/13/2003
4590 patrick henry drive santa clara, ca 95054-1817 telephone: (408 ) 9 19-250 0 facsimile : ( 40 8 ) 988-0279 subject: compliance with eu directives cel certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of european union (eu) directive 2002/95/ec restriction on use of hazardous substance s i n electrical and electronic equipment (rohs) and the requirements of eu directive 2003/11/ec restriction on penta and octa bde. cel pb-free products have the same base part number with a suffix added. the suffix Ca indicates that the device is pb-free. the Caz suffix is used to designate devices containing pb which are exempted from the requirement of rohs directive (*). in all cases the devices have pb-free terminals. all devices with these suffixes meet the requirements of the rohs directive. this status is based on cels understanding of the eu directives and knowledge of the materials that go into its products as of the date of disclosure of this information . restricted substanc e per rohs concentration limit per rohs (values are not yet fixed) concentration contained in cel devices -a -a z lead (p b) < 1000 ppm not detected (*) mercury < 1000 ppm not detected cadmiu m < 100 ppm not detected hexavalent chromiu m < 1000 ppm not detected pbb < 1000 ppm not detected pbde < 1000 ppm not detected if you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. important information and disclaimer: informatio n p rovided by ce l o n its website or in other communications concertin g the substan ce content of its products represents knowledge and belief as of the date that it is provided. cel bases its know ledge and belief on informatio n provided by thir d p arties and makes no representation or warrant y as to the accura cy of such information. efforts are underw ay to better integrate information from third parties. cel has taken and continues to take reasonable steps to provide representative and ac curate information but ma y not have conducted destructive testing or chemical analysis on incoming ma terials and chemicals. cel and ce l suppliers consider certain information to be propri etar y, and thus cas numbers and other limited information may not be availabl e for release . in no event shall cels liability arising out of such information exceed the total purchase price of the cel part(s) at issue s old by cel to customer on an annual basis. see cel terms and conditions for additional clarification of wa rranties and liabilit y.
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